The first chip will be used to store soft wearable

According to "Science Daily net," the report pointed out recently in the United States of an international technology team, officially announced the development of a new technology, which is a high-performance magnetic memory chips team will migrate to the surface of a soft plastic, and lossless performance . And through the soft plastic characteristics, the development of a transparent film-like "soft plastic smart chip." It has excellent data storage and processing power in the future if the formal commercialization, the future is expected to become an important product wearable storage element.

Reports indicated that research and development which "soft plastic smart chip" team first magnesium oxide-based magnetic tunnel junction (MTJ) grown on a silicon surface, then etching away silicon below, then the use of a transfer method, in a raw material made of polyethylene terephthalate made of soft plastic surface, a magnetic memory chips implanted. After testing, the new equipment in action Magnetoresistive Random Access Memory (MRAM) on the clear. Since MRAM in the processing speed, power consumption, and can be powered down after data storage and other properties, are higher than conventional random access memory chips. Therefore, the "soft plastic smart chip" Future after integration and MRAM will create a new birth of another storage element.

Currently, flexible electronics equipment market to develop soft magnetic storage device the most attention. Because they will be the future of wearable electronics, and biomedical device key components of data storage and processing. Although scientists have conducted a number of studies on different styles of memory chips and materials. However, the flexible substrate to create a high-performance memory chips without compromising its performance, the research is still facing enormous difficulties.

At present, developed the "soft plastic smart chip," the international team for the National University of Singapore, scientists Yonsei University, the University of Ghent, Belgium, Singapore and the Singapore Institute of Materials Engineering Research Institute of the combination. The team said that at present in the United States and South Korea have applied for a patent for this technology. The device is currently being further enhance the effectiveness of the experimental magnetoresistance, and look forward to products used in other electronic devices.

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